| PART |
Description |
Maker |
| STP22NF03L07 STP22NF03L |
N-channel 30V - 0.0038Ω - 22A - TO-220 STripFET II Power MOSFET
N-channel 30V - 0.0038ヘ - 22A - TO-220 STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| IRF5NJ5305 IRF5NJ5305SCX |
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
22 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-22A*)
SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*)
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| STL100NHS3LL |
N-channel 30V - 0.0032Ω - 22A - PowerFLAT?(6x5) STripFET?Power MOSFET plus monolithic Schottky
N-channel 30V - 0.0032ヘ - 22A - PowerFLAT⑩ (6x5) STripFET⑩ Power MOSFET plus monolithic Schottky
N-channel 30V - 0.0032Ω - 22A - PowerFLAT (6x5) STripFET Power MOSFET plus monolithic Schottky
|
STMicroelectronics
|
| HUF75623P3 HUF75623S3 HUF75623S3ST HUF75623S3S |
100V N-Channel UltraFET MOSFET
22A, 100V, 0.064 Ohm, N-Channel, UltraFETPower MOSFETs
22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs
22A/ 100V/ 0.064 Ohm/ N-Channel/ UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| RJH60D0DPQ-E0 RJH60D0DPQ-E0-T2 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| HUF75939S3ST HUF75939P3 HUF75939P3NL |
22A, 200V, 0.125 Ohm, N-Channel, UltraFETPower MOSFET
22A 200V 0.125 Ohm N-Channel UltraFET Power MOSFET
22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STB24NF10 |
N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 2SK944 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 22A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 22A条（丁）|47VAR
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 22A I(D) | TO-247VAR
|
Electronic Theatre Controls, Inc.
|
| APT5024SVR |
POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
